Damage formation during 1.0 MeV Si self-implantation at low temperatures

Journal of Electronic Materials

Volumn 28, Issue 4, 1999, Pages 385-389

  Huang, M B ^a,b   Mitchell, I V ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; DIFFUSION; ION IMPLANTATION; IONS; NITROGEN; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; THERMAL EFFECTS;

DAMAGE FORMATION; ION FLUX; RUTHERFORD BACKSCATTERING CHANNELING; SILICON SELF IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0033115787     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0238-0     Document Type: Article

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