Luminescence and electrical properties of InGaN/AIGaN/GaN light emitting diodes with multiple quantum wells

Semiconductors

Volumn 33, Issue 4, 1999, Pages 429-434

  Kudryashov, V E ^a   Turkin, A N ^a   Yunovich, A E ^a   Kovalev, A N ^b   Manyakhin, F I ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033114424     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187707     Document Type: Article

References (23)

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