Amorphous-Silicon Thin-Film Transistor with Liquid Phase Deposition of Silicon Dioxide Gate Insulator

IEEE Electron Device Letters

Volumn 20, Issue 3, 1999, Pages 138-139

  Yeh, Jiun Lin ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; LIQUID PHASE EPITAXY; SILICA; SILICON NITRIDE; THRESHOLD VOLTAGE;

SILICON DIOXIDE GATE INSULATOR;

THIN FILM TRANSISTORS;

EID: 0033100929     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.748913     Document Type: Article

References (5)

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3. H. Hiroshi and M. Masakiyo, "Amorphous-silicon thin-film metal-oxide-semiconductor transistors," Appl. Phys. Lett., vol. 36. p. 754, 1980.
4. J. S. Chou and S. C. Lee, "Improved process for liquid phase deposition of silicon dioxide," Appl. Phys. Lett., vol. 64, p. 1971, 1994.
5. 2 plasma treatment," Appl. Phys. Lett., vol. 64, p. 775, 1994.