Delay time measurements of NiS2-xSex-based switches

Physica Status Solidi (A) Applied Research

Volumn 172, Issue 1, 1999, Pages 131-136

  Chudnovskii, F A ^a   Pergament, A L ^b   Somasundaram, P ^c   Honig, J M ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; METAL INSULATOR BOUNDARIES; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR METAL BOUNDARIES; THRESHOLD VOLTAGE;

DELAY TIME MEASUREMENT;

SEMICONDUCTOR SWITCHES;

EID: 0033100556     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199903)172:1<131::AID-PSSA131>3.0.CO;2-I     Document Type: Article

References (8)

1. F. A. CHUDNOVSKII, A. L. PERGAMENT, G. B. STEFANOVICH, P. SOMASUNDARAM, and J. M. HONIG, phys. stat. sol. (a) 161, 577 (1997).
2. X. YAO and J. M. HONIG, Mater. Res. Bull. 29, 709 (1992).
3. X. YAO, J. M. HONIG, T. HOGAN, C. KANNEWURF, and J. SPAŁEK, Phys. Rev. B 54, 17469 (1997).
4. A. E. OWEN, P. G. LECOMBER, J. HAJTO, M. J. ROSE, and A. J. SNELL, Int. J. Electronics 73, 897 (1992).
5. X. YAO, Y.-K. KUO, D. K. POWELL, J. W. BRILL, and J. M. HONIG, Phys. Rev. B 56, 7129 (1997).
6. F. A. CHUDNOVSKII, L. L. ODYNETS, A. L. PERGAMENT, and G. B. STEFANOVICH, J. Solid State Chem. 122, 95 (1996).
7. A. L. PERGAMENT, G. B. STEFANOVICH, and F. A. CHUDNOVSKII, Tech. Phys. Lett. 19, 663 (1993).
8. G. C. VEZZOLI, P. J. WALSH, and M. A. SHOGA, Phil. Mag. B63, 739 (1991).