Topological consideration of thallium on glassy arsenous selenide

Vacuum

Volumn 52, Issue 3, 1999, Pages 359-363

  Fayek, S A ^a   Fouad, S S ^b,c  

^a NATIONAL CENTER FOR RADIATION RESEARCH AND TECHNOLOGY   (Egypt)

^b Ain Shams University   (Egypt)

^c NONE   (Egypt)

Author keywords

Chalcogenide system; Glassy As2Se3; Lone pair electrons

Indexed keywords

ATOMIZATION; COMPOSITION EFFECTS; DIFFERENTIAL THERMAL ANALYSIS; ELECTRONS; POSITIVE IONS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; THALLIUM; VACUUM TECHNOLOGY;

ARSENOUS SELENIDE; CHALCOGENIDES;

SEMICONDUCTING GLASS;

EID: 0033097923     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00322-4     Document Type: Article

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