SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 589-597

Electron conduction in low temperature grown GaAs

(4) Khirouni, K a Stellmacher, M b Nagle, J b Bourgoin, J C c

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b FCA UNESP (Brazil)

c SORBONNE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTANCE; ELECTRIC EXCITATION; PERCOLATION (SOLID STATE); PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH; SPECTROSCOPY;

ADMITTANCE SPECTROSCOPY; ELECTRON CONDUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033097676 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(98)00309-8 Document Type: Article

Times cited : (6)

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