4500V trench gate IEGT with current sense function

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2, Issue , 1999, Pages 676-681

  Kon, Hironobu ^a   Kitagawa, Mitsuhiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENT CONTROL; ELECTRIC POTENTIAL; FUNCTIONS; GATES (TRANSISTOR); SHORT CIRCUIT CURRENTS; SWITCHING NETWORKS; THYRISTORS;

COLLECTOR CURRENT; INJECTION ENHANCED GATE TRANSISTOR; SWITCHING LOSS;

MOSFET DEVICES;

EID: 0033097124     PISSN: None     EISSN: None     Source Type: None    
DOI: 10.1109/apec.1999.750434     Document Type: Article

References (7)

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2. M.Kitagawa, S.Hasegawa, T.Inoue, A.Yahata and H.Ohashi, "4.5kV Injection Enhanced Gate Transistor: Experimental Verification of the Electrical Characteristics", Jpn. J. Appl. Phys. Vol.36 pp3433-343179,97.
3. M.Kitagawa, A.Nakagawa, 1.Omura and H.Ohashi, "Design Criterion and Operation Mechanism for 4.5kV Injection Enhanced Gate Transistor", Jpn. J. Appl. Phys. Vo1.37 pp4294-4300,1998
4. Y.Seki, Y.Harada. N.Iwamuro and N.Kumagai, "A New IGBT With A Monolithic Over-Current Protection Circuit", Proc. of ISPSD'94, pp31-35, 1994.
5. T.Yamazaki, Y.Seki, Y.Hoshi, and N.Kumagai, "The IGBT with Monolithic Overvoltage Protection Circuit", Proc. of ISPSD93, pp41-45, 1993.
6. H.Kon, K.Nakayama, S.Yanagisawa, J.Miwa and Y.Uetake, "The 4500V-750A Planar Gate Press Pack IEGT', Proc. of ISPSD98, pp81-84, 1998
7. M.Takei, Y.Minoya, N.Kumagai and K.Sakurai, "Analysis of IPM Current Oscdlation under Short Circuit Condition", Proc. of ISPSD98, pp89-93,1998