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Applied Physics A: Materials Science and Processing

Volumn 68, Issue 3, 1999, Pages 353-356

Growth and absorption properties of Dy-doped and undoped p-type TlGaSe2

(1) Gurbulak B a

a ATATÜRK UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; DYSPROSIUM; ENERGY GAP; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THALLIUM COMPOUNDS; THERMAL EFFECTS;

BRIDGMAN-STOCKBARGER METHOD; THALLIUM GALLIUM SELENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033096829 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050902 Document Type: Article

Times cited : (15)

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