The Formation of Ti-Polycide Gate Structure with High Thermal Stability Using Chemical-Mechanical Polishing (CMP) Planarization Technology

IEEE Electron Device Letters

Volumn 20, Issue 2, 1999, Pages 86-88

  Kim, Hyoung Sub ^a   Ko, Dae Hong ^b   Bae, Dae Lok ^a   Fujihara, Kazuyuki ^a   Kang, Ho Kyu ^a  

^a SAMSUNG Electronics   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CHEMICAL POLISHING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; THERMAL CYCLING; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

CHEMICAL-MECHANICAL POLISHING (CMP);

GATES (TRANSISTOR);

EID: 0033079879     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.740660     Document Type: Article

References (7)

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