Chemical reaction process and the single crystal growth of CuInS2 compound

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 169-176

  Matsushita, Hiroaki ^a,b   Mihira, Tomohiro ^a   Takizawa, Takeo ^a  

^a NIHON UNIVERSITY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Chemical reaction process; CuInS2; DTA; Horizontal Bridgeman method; Sulfurization; X ray diffraction

Indexed keywords

COPPER COMPOUNDS; CRYSTAL GROWTH FROM MELT; DIFFERENTIAL THERMAL ANALYSIS; PRESSURE EFFECTS; SINGLE CRYSTALS; VAPOR PRESSURE; X RAY POWDER DIFFRACTION;

COPPER INDIUM SILICIDE; EXOTHERMIC REACTION; SULFURIZATION HORIZONTAL BRIDGEMAN METHOD;

SEMICONDUCTOR GROWTH;

EID: 0033079864     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00911-7     Document Type: Article

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