Electrical properties of Cr/Si(p) structures

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 439-446

  Benouattas, N ^a   Tamaarat, B ^b   Bouabellou, A ^b   Halimi, R ^b   Mosser, A ^c  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b Universite Mentouri Constantine   (Algeria)

^c INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; INTERFACES (MATERIALS); ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

P-TYPE CONDUCTIVITY;

SEMICONDUCTOR JUNCTIONS;

EID: 0033079523     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00187-7     Document Type: Article

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