Low-Noise Ku-Band MMIC Balanced P-HEMT Upconverter

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 2, 1999, Pages 259-263

  De La Fuente, Ma L ^a   Portilla, J ^a   Pascual, J P ^a   Artal, E ^a  

^a UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

High electron mobility transistor (HEMT); Low noise; Monolithic microwave integrated circuit (MMIC); Upconverter

Indexed keywords

GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; HIGH PASS FILTERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

UPCONVERTERS;

ELECTRIC CONVERTERS;

EID: 0033078299     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.743793     Document Type: Article

References (4)

1. R. Goyal, Monolithic Microwave Integrated Circuits: Technology & Design. Norwood, MA: Artech House, 1989.
2. I. D. Robertson and A. H. Aghavami, "A compact X-band monolithic balanced FET mixer," in IEEE/ESTEC Eur. GaAs Applications Symp. Dig., Apr. 1992.
3. S. A. Maas, "Design and performance of a 45-GHz HEMT mixer," IEEE Microwave Theory Tech., vol. MTT-34, pp. 799-803, July 1986.
4. R. A. Pucel, D. Massé, and R. Bera, "Performance of GaAs MESFET mixers at X band," IEEE Microwave Theory Tech., vol. MTT-24, pp. 351-360, June 1976.