Influence of the substrate temperature and annealing on the 1.54-μm erbium photoluminescence of a-Si:H films obtained using a glow discharge

Semiconductors

Volumn 33, Issue 2, 1999, Pages 177-179

  Terukov, E I ^a   Kon'kov, O I ^a   Kudoyarova, V Kh ^a   Gusev, O B ^a   Weiser, G ^b   Kuehne, H ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033077073     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187888     Document Type: Article

References (6)

1. E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, and G. Weiser, Fiz. Tekh. Poluprovodn. 32, 987 (1998) [Semiconductors 32, 884 (1998)].
2. E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, and G. Weiser, Fiz. Tekh. Poluprovodn. 32, 987 (1998) [Semiconductors 32, 884 (1998)].
3. M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, I. N. Yassievich, B. P. Zakharchenya, W. Fuhs, and A. Sturm, Appl. Phys. Lett. 67, 3599 (1995).
4. R. A. Street, Hydrogenated Amorphous Silicon, Cambridge University Press, Cambridge (1991).
5. L. H. Slooff, A. Polman, M. P. Oude Wolbers, F. C. J. M. van Veggel, D. N. Reinhoudt, and J. W. Hofstraat, J. Appl. Phys. 83, 497 (1998).
6. W. Fuhs, I. Ulber, G. Weiser, M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, E. I. Terukov, and I. N. Yassievich, Phys. Rev. B 56, 9545 (1997).