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The dependence of the interfacial thickness on the AN content of SAN was measured at various temperatures from 180 to 215 °C. A maximum thickness was attained at around 25 wt % of SAN at 180 °C and was attained at 40 wt % at 200 °C
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To simplify the intra-images calculation, the signal intensities recorded on IPs are translated to logarithmic values, and the double logarithmic form of the eq 1, log S(E) = log A - r log E, was applied for the creation of the background image
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To simplify the intra-images calculation, the signal intensities recorded on IPs are translated to logarithmic values, and the double logarithmic form of the eq 1, log S(E) = log A - r log E, was applied for the creation of the background image.
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