Work function measurements of Gd/W(111) with and without silicon interface layers: Field emission study

Surface Science

Volumn 422, Issue 1-3, 1999, Pages 24-32

  Shakirova, S A ^a   Serova, E V ^a  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

Field emission; Gadolinium; Low index single crystal surfaces; Metal metal interfaces; Metal semiconductor interfaces; Silicon; Tungsten; Work function

Indexed keywords

ADSORPTION; COMPOSITION EFFECTS; FILM GROWTH; GADOLINIUM; MONOLAYERS; PASSIVATION; SILICON; SINGLE CRYSTALS; TUNGSTEN;

FOWLER-NORDHEIM PRE-EXPONENTIAL; FRANK-VAN DER MERWE MECHANISM; LOW INDEX SINGLE CRYSTALS; VOLMER-WEBER MECHANISM; WORK FUNCTION MEASUREMENTS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0033076116     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00854-1     Document Type: Article

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