Conductivity of structures based on doped nanocrystalline SnO2 films with gold contacts

Semiconductors

Volumn 33, Issue 2, 1999, Pages 175-176

  Akimov, B A ^a   Gas'kov, A M ^a   Podguzova, S E ^a   Rumyantseva, M N ^a   Ryabova, L I ^a   Labeau, M ^b   Tadeev, A ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033075999     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187666     Document Type: Article

References (9)

1. M. N. Rumyantseva, A. M. Gaskov, L. I. Ryabova, J. P. Senateur, B. Chenevier, and M. Labeau, Mater. Sci. Eng. 41, 333 (1996).
2. M. N. Rumyantseva, M. Labeau, G. Delabouglise, L. Ryabova, I. Kutsenok, and A. Gaskov, J. Toxicol. Environ. Health 7, 1785 (1997).
3. B. A. Akimov, A. V. Albul, A. M. Gas'kov, V. Yu. Il'in, M. Labeau, M. N. Rumyantseva, and L. I. Ryabova, Fiz. Tekh. Poluprovodn. 31, 400 (1997) [Semiconductors 31, 335 (1997)].
4. B. A. Akimov, A. V. Albul, A. M. Gas'kov, V. Yu. Il'in, M. Labeau, M. N. Rumyantseva, and L. I. Ryabova, Fiz. Tekh. Poluprovodn. 31, 400 (1997) [Semiconductors 31, 335 (1997)].
5. B. A. Akimov, A. M. Gas'kov, M. Labeau, M. M. Osipova, M. N. Rumyantseva, and L. I. Ryabova, Vestn. Mosk. Univ., Ser. 3: Fiz. Astron. 5, 60 (1996).
6. C. G. Fonstad and R. H. Rediker, J. Appl. Phys. 42, 2911 (1971).
7. I. B. Gautheron, M. Labeau, G. Delabouglise, and U. Schmatz, Sens. Actuators B 15-16, 357 (1993).
8. M. Labeau, B. Gautheron, F. Cellier, M. Vallet-Regi, E. Garcia, and Gonzalez Calbet, J. Solid State Chem. 102, 434 (1993).
9. G. K. Reeves and H. B. Harrison, IEEE Trans. Electron Device Lett. 5, 111 (1982).