Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

Journal of Materials Research

Volumn 14, Issue 2, 1999, Pages 371-376

  Nakano, Yoshitaka ^a   Sakata, Jiro ^a   Taga, Yasunori ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTALLIZATION; CRYSTALS; ELECTRON ENERGY LEVELS; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ADMITTANCE SPECTROSCOPY; ANISOTROPIC CRYSTALLIZATION; CRYSTALLITES; SPUTTERED AMORPHOUS SILICON FILMS; SURFACE DEFECT STATES; VERTICAL COLUMNAR STRUCTURE;

AMORPHOUS FILMS;

EID: 0033075099     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0054     Document Type: Article

References (11)

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