-
1
-
-
56349126573
-
Discrete variational Xα calculations (I), Application to metal clusters
-
Adachi H., Tukada M., Satoko C. Discrete variational Xα calculations (I), Application to metal clusters. J. Phys. Soc. Jpn. 45:1978;875-883.
-
(1978)
J. Phys. Soc. Jpn.
, vol.45
, pp. 875-883
-
-
Adachi, H.1
Tukada, M.2
Satoko, C.3
-
2
-
-
0000188767
-
2 on Si(111)-7×7 substrate
-
2 on Si(111)-7×7 substrate. Appl. Phys. Lett. 63:1993;485-487.
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 485-487
-
-
Choi, K.C.1
Yang, S.J.2
Ryu, J.Y.3
Lee, J.Y.4
Park, H.-H.5
Kwon, O.J.6
Lee, Y.P.7
Kim, K.H.8
-
4
-
-
0001654236
-
Geometric structure of the Si(111) √3×√3 - Ga surface
-
Kawazu A., Sakama H. Geometric structure of the Si(111) 3 × 3 - Ga surface. Phys. Rev. B. 37:1988;2704-2706.
-
(1988)
Phys. Rev. B
, vol.37
, pp. 2704-2706
-
-
Kawazu, A.1
Sakama, H.2
-
5
-
-
0024301292
-
Characterization of ion-beam-sputtered tungsten films on silicon
-
Meyer F., Schwebel C., Pellet C. Characterization of ion-beam-sputtered tungsten films on silicon. Appl. Surf. Sci. 36:1989;231-239.
-
(1989)
Appl. Surf. Sci.
, vol.36
, pp. 231-239
-
-
Meyer, F.1
Schwebel, C.2
Pellet, C.3
-
6
-
-
0024014144
-
Study on the Si(111) √3×√3 - Ag surface structure by X-ray diffraction
-
Takahashi T., Nakatani S., Okamoto N., Isikawa T., Kikuta S. Study on the Si(111) 3 × 3 - Ag surface structure by X-ray diffraction. Jpn. J. Appl. Phys. 27:1988;L753-L755.
-
(1988)
Jpn. J. Appl. Phys.
, vol.27
, pp. 753-L755
-
-
Takahashi, T.1
Nakatani, S.2
Okamoto, N.3
Isikawa, T.4
Kikuta, S.5
-
7
-
-
11644283926
-
Structural analysis of Si(111)-7×7 reconstructed surface by transmission electron diffraction
-
Takayanagi K., Tanishiro Y., Takahashi S., Takahashi M. Structural analysis of Si(111)-7×7 reconstructed surface by transmission electron diffraction. Surf. Sci. 164:1985;367-392.
-
(1985)
Surf. Sci.
, vol.164
, pp. 367-392
-
-
Takayanagi, K.1
Tanishiro, Y.2
Takahashi, S.3
Takahashi, M.4
-
8
-
-
0018457023
-
Refractory metal gate processes for VLSI applications
-
Shah P.L. Refractory metal gate processes for VLSI applications. IEE Trans. Electronic Device. ED-26:1979;631-640.
-
(1979)
IEE Trans. Electronic Device
, vol.26
, pp. 631-640
-
-
Shah, P.L.1
-
9
-
-
0028483172
-
Structural and material properties of tungsten silicide formed at low temperature
-
Singh A., Khokle W.S., Lai K. Structural and material properties of tungsten silicide formed at low temperature. Vacuum. 45:1994;867-869.
-
(1994)
Vacuum
, vol.45
, pp. 867-869
-
-
Singh, A.1
Khokle, W.S.2
Lai, K.3
-
10
-
-
0028203024
-
Phase transformation of Mo and W over Co or its alloy in contact with Si
-
Yang F.-M., Chen M.-C. Phase transformation of Mo and W over Co or its alloy in contact with Si. Thin Solid Films. 238:1994;146-154.
-
(1994)
Thin Solid Films
, vol.238
, pp. 146-154
-
-
Yang, F.-M.1
Chen, M.-C.2
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