Tilt dependence of the secondary electron emission at low excitation energy

Scanning

Volumn 21, Issue 1, 1999, Pages 23-26

  Libinson, A G ^a  

^a Applied Materials Inc Israel   (Israel)

Author keywords

Low voltage scanning electron microscopy; Secondary electron emission; Tilt influence; Topography contrast

Indexed keywords

ARTICLE; CONTRAST ENHANCEMENT; ENERGY TRANSFER; IMAGE ANALYSIS; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; THREE DIMENSIONAL IMAGING;

EID: 0032978199     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950210103     Document Type: Article

References (6)

1. nd Ed., Plenum Press, New York (1992) 111
2. Li X, Anma Y, Kodama T, Uchikawa Y: A surface morphology reconstruction method from an SEM image with genetic algorithmes. Electron Microscopy 1998 1, 157 (1998)
3. Kodama T, Tajima K, Kubota Y, Uchikawa Y: Genetic algorithms as applied to reconstrucuion of surface morphology from an SEM image. J Electr Microsc 46, 215-220 (1997)
4. Reimer L: Image Formation in Low-Voltage Scanning Electron Microscopy. SPIE (1993) 65-70
5. Seiler H:Secondary electron emisssion in the scanning electron microscopy. J Appl. Phys 54, R1 (1983)
6. 2 by bombardment with 1-3 keV electrons up to very large angles of incidence. J Appl Phys 53, 5230-5238 (1982)