Confocal microscopy and spectroscopy of InGaN epilayers on sapphire

Journal of Microscopy

Volumn 193, Issue 2, 1999, Pages 105-108

  O'Donnell, K P ^a   Tobin, M J ^b   Bayliss, S C ^c   Van Der Stricht, W ^d  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c DE MONTFORT UNIVERSITY   (United Kingdom)

^d GHENT UNIVERSITY   (Belgium)

Author keywords

Confocal microscopy; Spatial inhomogeneities

Indexed keywords

ALUMINUM NITRIDE; CONFOCAL MICROSCOPY; EPILAYERS; FLUORESCENCE; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; SAPPHIRE;

CONFOCAL MICROSCOPES; FLUORESCENCE IMAGE; HIGH QUALITY; INGAN EPILAYERS; SAMPLE AREAS; SAMPLE COOLING; SCANNING CONFOCAL MICROSCOPY; SPATIAL IN-HOMOGENEITY; SPECTRAL SELECTION; SYCLOPS;

SEMICONDUCTOR ALLOYS;

GALLIUM; INDIUM; METAL COMPLEX;

ARTICLE; BRIGHTNESS; CONFOCAL LASER MICROSCOPY; COOLING; FILTER; FLUORESCENCE MICROSCOPY; FLUORESCENCE SPECTROSCOPY; IMAGE ANALYSIS; IMAGE ENHANCEMENT; IMAGE QUALITY; LASER MICROSCOPE; LENS; OPTICAL RESOLUTION; PRIORITY JOURNAL; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 0032949251     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1999.00449.x     Document Type: Article

References (10)

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