MD analyses of surface reaction and adsorbed free particle behavior in LP-CVD silicon wafer processing

JSME International Journal, Series B: Fluids and Thermal Engineering

Volumn 42, Issue 2, 1999, Pages 249-254

  Kato, Seizo ^a   Hu, Hangxiang ^b  

^a MIE UNIVERSITY   (Japan)

^b Hayashiguchi MFG Co Ltd   (Japan)

Author keywords

Adsorbed hydrogen behavior; Chemical reaction; LP CVD; Molecular dynamics; Silicon wafer; Structural analysis

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; COMPUTER GRAPHICS; CRYSTAL LATTICES; HYDROGEN; MOLECULAR DYNAMICS; SEMICONDUCTOR DEVICE MANUFACTURE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON WAFERS;

CHEMICAL REACTION; FABRICATION; SEMICONDUCTOR; VAPOR DEPOSITION;

EID: 0032857722     PISSN: 13408054     EISSN: None     Source Type: Journal    
DOI: 10.1299/jsmeb.42.249     Document Type: Article

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