High-resolution electron microscopy study of defect structures in γ-TiAl irradiated with 15 keV He ions in a high-voltage transmission electron microscope

Journal of Electron Microscopy

Volumn 48, Issue 4, 1999, Pages 355-360

  Song, Minghui ^a   Furuya, Kazuo ^a   Tanabe, Tatsuhiko ^a   Noda, Tetsuji ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

He ion irradiation; High resolution electron microscopy; Irradiation defect; Rotated domain; TiAl

Indexed keywords

ANNEALING; DEFECTS; ELECTRONS; ION BOMBARDMENT; IONS;

DEFECT CLUSTER; HE ION IRRADIATION; HIGH VOLTAGE TRANSMISSION ELECTRON MICROSCOPES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS IRRADIATION; IRRADIATION DEFECT; MATRIX; PLANAR DEFECT; ROTATED DOMAIN; Γ-TIAL;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032848866     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023688     Document Type: Article

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