Growth of ZnSe single crystal by CVT method with self-moving convection shield

Journal of Crystal Growth

Volumn 196, Issue 1, 1999, Pages 83-87

  Fujiwara, S ^a   Namikawa, Y ^a   Hirota, Y ^a   Irikura, M ^a   Matsumoto, K ^a   Kotani, T ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; HARDENING; IODINE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

CHEMICAL VAPOR TRANSPORT (CVT); ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032784815     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00895-1     Document Type: Article

References (14)

1. M.A. Hasse, J. Qiu, J.M. DePuydt, H. Cheng, Appl. Phys. Lett. 59 (1991) 1272.
2. E. Kato, H. Noguchi, M. Nagai, H. Okuyama, S. Kijima, A. Ishibashi, Electron. Lett. 34 (1998) 282.
3. K. Katayama, H. Yao, F. Nakanishi, H. Doi, A. Saegusa, N. Okuda, T. Yamada, H. Matsubara, M. Irikura, T. Matsuoka, T. Takebe, S. Nishine, T. Shirakawa, J. Appl. Phys. Lett. 73 (1998) 102.
4. S. Fujita, H. Mimoto, H. Takebe, T. Noguchi, J. Crystal Growth 47 (1979) 326.
5. T. Koyama, T. Yodo, H. Oka, K. Yamashita, T. Yamasaki, J. Crystal Growth 91 (1988) 639.
6. T. Koyama, K. Yamashita, K. Kumata, J. Crystal Growth 96 (1989) 217.
7. S. Fujiwara, R. Hirota, S. Nishine, T. Kotani, K. Matsumoto, Proc. 16th Electronic Materials Symp. Minoo, 1997, p. 255.
8. S. Fujiwara, H. Morishita, T. Kotani, K. Matsumoto, T. Shirakawa, J. Crystal Growth 186 (1998) 60.
9. K. Böttcher, H. Hartmann, J. Crystal Growth 146 (1995) 53.
10. Y. Noda, H. Yonekura, Y. Okunuki, S. Nakazawa, Mater. Trans. JIM 36 (1995) 1067.
11. Sidney G. Parker, J. Crystal Growth 9 (1971) 177.
12. J. Baillou, J. Daunay, P. Bugnet, Jac Daunay, C. Auzary, R. Poindessault , J. Phys. Chem. Solids 41 (1980) 295.
13. A.K. Ray, F.A. Kröger, J. Electrochem. Soc. 125 (1978) 1348.
14. S. Satoh, K. Igaki, Jpn. J. Appl. Phys. 22 (1983) 68.