High-resolution photoemission studies at rough Cu(111) surfaces: The influence of defect scattering and disorder-dependent dephasing processes

Surface Science

Volumn 420, Issue 1, 1999, Pages 33-42

  Theilmann, F ^a   Matzdorf, R ^a   Goldmann, A ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

Angle resolved photoemission; Chemical vapour deposition; Copper; Electronic surface states; Epitaxy; Low energy electron diffraction (SPALEED); Low index single crystal surfaces

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON EMISSION; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; PHOTOEMISSION; SINGLE CRYSTALS; SURFACE ROUGHNESS;

HOMOEPITAXIAL GROWTH; SPOT-PROFILE ANALYSIS;

COPPER;

EID: 0032776258     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00811-5     Document Type: Article

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