Grain boundary reactive diffusion during Ni 2 Si formation in thin films and its dependence on the grain boundary angle

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 163-169

  Jardim, P M ^a   Acchar, W ^b   Losch, W ^a  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

Author keywords

Diffusion; Suicide

Indexed keywords

CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; FILM GROWTH; GRAIN BOUNDARIES; NICKEL COMPOUNDS; SEMICONDUCTING FILMS; SILICON WAFERS; TEXTURES; THIN FILMS;

SOLID STATE REACTIONS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032761689     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00475-9     Document Type: Article

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