Polycrystalline silicon precipitates on SiO 2 using an argon excimer laser

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 78-82

  Ohmukai, Masato ^a   Takigawa, Yasuo ^b   Kurosawa, Kou ^c  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^c UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

Growth; Radiation effect; Silicon

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; ELECTRON REFLECTION; EXCIMER LASERS; GAS LASERS; LASER ABLATION; POLYCRYSTALLINE MATERIALS; PRECIPITATION (CHEMICAL); RAMAN SPECTROSCOPY; SILICON; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

BOND BRAKING;

FUSED SILICA;

EID: 0032761632     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00371-7     Document Type: Article

References (6)

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