Modeling of the photoluminescence in multiquantum-well heterostructure laser wafers

IEEE Journal of Quantum Electronics

Volumn 35, Issue 1, 1999, Pages 84-92

  Grinberg, A A ^a   Alam, Muhammad A ^a   Sputz, Sharon K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Photoluminescence; Quantum well lasers; Semiconductor device modeling; Semiconductor epitaxial layer

Indexed keywords

HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SILICON WAFERS;

MULTIQUANTUM WELL HETEROSTRUCTURE LASER WAFERS;

QUANTUM WELL LASERS;

EID: 0032761162     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.737624     Document Type: Article

References (8)

1. 1-xAs-GaAs DH material following microscopic physical damage," Appl. Phys. Lett., vol. 24, pp. 494-496, 1974.
2. 1-xAs-GaAs hetero-structures," J. Appl. Phys., vol. 48, pp. 3962-3970, 1977.
3. J. Degani, D. P. Wilt, and P. Besomi, "Effect of photocarrier spreading on the photoluminescence of double hetero-structure material," J. Appl. Phys., vol. 56, pp. 468-476, 1984.
4. A. A. Grinberg and S. K. Sputz "Threshold-like behavior of photoluminescence in laser heterostructure wafers," J. Appl. Phys., vol. 82, pp. 4006-4012, 1997.
5. M. A. Alam, M. S. Hybertsen, R. K. Smith, G. A. Baraff, and M. R. Pinto, "Simulation of semiconductor quantum well laser," in Proc. SPIE, vol. 2994, pp. 709-722, 1997.
6. M. Grupen and K. Hess, "Simulation of carrier transport and nonlinearities in quantum well laser diodes," IEEE J. Quantum Electron., vol. 34, pp. 120-140, 1998.
7. M. S. Hybertsen, R. F. Kazarinov, G. A. Baraff, D. A. Ackerman, G. E. Shtengel, P. A. Morton, T. Tanbun-Ek, and R. A. Logan, "Modeling of gain for InGaAaP based lasers," in Proc. SPIE, vol. 2399, pp. 133-145, 1995.
8. A. A. Grinberg, "Thermionic-tunneling-diffusion model of the laser current-voltaae and power characteristics," J. Appl. Phys., vol. 75, pp. 7669-7680, 1994.