Structural study of thin amorphous SiO2 and Si3N4 films by the grazing incidence x-ray scattering (GIXS) method

High Temperature Materials and Processes

Volumn 18, Issue 1-2, 1999, Pages 99-107

  Sato, Shigeo ^a   Kakiuchi, Ryoji ^a   Yoshiya, Masato ^a   Matsubara, Eiichiro ^a   Saito, Masatoshi ^a   Waseda, Yoshio ^a   Takayama, Shinji ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; SILICON COMPOUNDS; STRUCTURE (COMPOSITION); THIN FILMS; X RAY SCATTERING;

GRAZING INCIDENCE X RAY SCATTERING; NETWORK STRUCTURE;

AMORPHOUS FILMS;

EID: 0032760548     PISSN: 03346455     EISSN: None     Source Type: Journal    
DOI: 10.1515/HTMP.1999.18.1-2.99     Document Type: Article

References (22)