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Thin Solid Films

Volumn 338, Issue 1-2, 1999, Pages 110-117

Effect of impurities on initial stages of phase formation for the system of Ti deposited on (001) Si-Ge layers

(6) Beregovsky, M a Levin, I a Berner, A a Eizenberg, M a Demuth, V b Strunk, H P b

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Impurities; Phase transitions; Silicides; Titanium

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; IMPURITIES; PHASE TRANSITIONS; SILICON COMPOUNDS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY POWDER DIFFRACTION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

METALLIC FILMS;

EID: 0032759546 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01051-7 Document Type: Article

Times cited : (5)

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