Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

Semiconductor Science and Technology

Volumn 14, Issue 1, 1999, Pages 85-88

  Chen, H J ^a   Lin, D Y ^a   Huang, Y S ^a   Tu, R C ^b   Su, Y K ^b   Tiong, K K ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXCITONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

BAND-EDGE EXCITON; CONTACTLESS ELECTROREFLECTANCE (CER) MEASUREMENTS;

SEMICONDUCTING FILMS;

EID: 0032758801     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/1/013     Document Type: Article

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