Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 320-326

  Belogorokhov, A I ^a   Bublik, V T ^b   Scherbachev, K D ^b   Parkhomenko, Yu N ^b   Makarov, V V ^c   Danilin, A B ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^c Cent for Analysis of Substances   (Russian Federation)

Author keywords

Implantation; Ion beam synthesis; Mutual redistribution; Nitrogen; Oxygen

Indexed keywords

ANNEALING; ATOMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN; OXYGEN; RADIATION DAMAGE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

HALOGEN LAMP; ION BEAM SYNTHESIS; MUTUAL REDISTRIBUTION;

ION IMPLANTATION;

EID: 0032740547     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00603-X     Document Type: Article

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