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Volumn 147, Issue 1-4, 1999, Pages 136-141

Modification of a post-implantation defect activity for photovoltaic conversion

Author keywords

Bandgap, defect and stress engineering; Defect activity; Electronic transport; Ion beam amorphization; Photovoltaic conversion; Planar nanostructure

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; ION BEAMS; MODIFICATION; NANOSTRUCTURED MATERIALS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STRESSES;

EID: 0032735774     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00568-0     Document Type: Article
Times cited : (4)

References (7)
  • 2
    • 0346781064 scopus 로고
    • 11-15 April, Amsterdam, The Netherlands
    • B. Von Roedern, 12th E.C. PVSEC, 11-15 April 1994, Amsterdam, The Netherlands, pp. 1354.
    • (1994) 12th E.C. PVSEC , pp. 1354
    • Von Roedern, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.