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Volumn 147, Issue 1-4, 1999, Pages 136-141
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Modification of a post-implantation defect activity for photovoltaic conversion
a b b a a a c c c
b
CEA GRENOBLE
(France)
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Author keywords
Bandgap, defect and stress engineering; Defect activity; Electronic transport; Ion beam amorphization; Photovoltaic conversion; Planar nanostructure
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Indexed keywords
AMORPHIZATION;
ANNEALING;
CRYSTAL DEFECTS;
ELECTRON TRANSPORT PROPERTIES;
ENERGY GAP;
ION BEAMS;
MODIFICATION;
NANOSTRUCTURED MATERIALS;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTING SILICON;
SINGLE CRYSTALS;
STRESSES;
DEFECT ACTIVITY;
ION BEAM AMORPHIZATION;
PHOTOVOLTAIC CONVERSION;
ION IMPLANTATION;
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EID: 0032735774
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(98)00568-0 Document Type: Article |
Times cited : (4)
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References (7)
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