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Volumn 48, Issue 5, 1999, Pages 581-584

Chemical disordering and crystalline-to-amorphous transition induced by MeV electron irradiation in GaAs

Author keywords

Electron irradiation induced phase transition; GaAs; Non equilibrium solid phase; UHVEM

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS;

EID: 0032717711     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023719     Document Type: Article
Times cited : (7)

References (10)
  • 1
    • 0020707519 scopus 로고
    • Mechanism of disordering in FeAl under electron irradiation
    • Mukai T, Kinoshita C, and Kitajima S (1983) Mechanism of disordering in FeAl under electron irradiation. Phil. Mag. A 47: 255-271.
    • (1983) Phil. Mag. A , vol.47 , pp. 255-271
    • Mukai, T.1    Kinoshita, C.2    Kitajima, S.3
  • 2
    • 0028533978 scopus 로고
    • In-situ observations of irradiation-induced phase transitions
    • Kinoshita C, Tomokiyo Y, and Nakai K (1994) In-situ observations of irradiation-induced phase transitions. Ultramicroscopy 56: 216-224.
    • (1994) Ultramicroscopy , vol.56 , pp. 216-224
    • Kinoshita, C.1    Tomokiyo, Y.2    Nakai, K.3
  • 3
    • 0011713759 scopus 로고
    • HVEM study on the non-equilibrium solid phases produced by MeV electron irradiation
    • Mori H (1993) HVEM study on the non-equilibrium solid phases produced by MeV electron irradiation. J. Electron Microsc. 42: 361-370.
    • (1993) J. Electron Microsc. , vol.42 , pp. 361-370
    • Mori, H.1
  • 4
    • 0028787823 scopus 로고
    • Analysis of bonding state in pure and gold-implanted amorphous SiC by a combination of UHVEM and AES
    • Yasuda H and Mori H (1995) Analysis of bonding state in pure and gold-implanted amorphous SiC by a combination of UHVEM and AES. J. Microsc. 180: 80-86.
    • (1995) J. Microsc. , vol.180 , pp. 80-86
    • Yasuda, H.1    Mori, H.2
  • 7
    • 0024666508 scopus 로고
    • Electron irradiation induced crystalline-amorphous transition in ceramics
    • Inui H, Mori H, and Fujita H (1989) Electron irradiation induced crystalline-amorphous transition in ceramics. Acta Metall. 37: 1337-1342.
    • (1989) Acta Metall. , vol.37 , pp. 1337-1342
    • Inui, H.1    Mori, H.2    Fujita, H.3
  • 8
    • 0043065104 scopus 로고
    • Electron-irradiation-induced crystalline-to-amorphous transition in metallic and non-metallic compounds
    • Elsevier, Amsterdam
    • Mori H and Fujita H (1992) Electron-irradiation-induced crystalline-to-amorphous transition in metallic and non-metallic compounds. In: Ordering and Disordering in Alloys, pp. 277-286 (Elsevier, Amsterdam).
    • (1992) Ordering and Disordering in Alloys , pp. 277-286
    • Mori, H.1    Fujita, H.2
  • 9
    • 0021794515 scopus 로고
    • Formation of point defect clusters and the nature of point defects in electron irradiated Ge and III-V compound semiconductors
    • Colorado, California
    • Hirata M, Takeda S, Hirata M, and Kiritani M (1984) Formation of point defect clusters and the nature of point defects in electron irradiated Ge and III-V compound semiconductors. In: Proceedings of the 13th International Conference on Defects in Semiconductors, pp. 359-366, (Colorado, California).
    • (1984) Proceedings of the 13th International Conference on Defects in Semiconductors , pp. 359-366
    • Hirata, M.1    Takeda, S.2    Hirata, M.3    Kiritani, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.