Calibration and temperature compensation of silicon pressure sensors using ion-implanted trimming resistors

Sensors and Actuators, A: Physical

Volumn 72, Issue 2, 1999, Pages 148-152

  Lee, Bo Na ^a   Kim, Kun Nyun ^a   Park, Hyo Derk ^a   Shin, Sang Mo ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

Ion implanted resistors; Pressure sensor; Signal conditioning circuits; Temperature coefficient

Indexed keywords

CALIBRATION; ELECTRIC POTENTIAL; ION IMPLANTATION; PIEZOELECTRIC TRANSDUCERS; PRESSURE TRANSDUCERS; RESISTORS;

PIEZORESISTORS; SILICON PRESSURE SENSORS;

SILICON SENSORS;

EID: 0032714384     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00214-3     Document Type: Article

References (5)

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3. Motorola Semiconductors for Automotive Electronics System, Motorola brochure SGBR932S/D, 1990.
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5. U. Schoneberg, et al., CMOS Integrated Capacitive Pressure Transducer with On-Chip Electronics and Digital Capability, Tech Digest Transducers '91, San Francisco, 1991, pp. 304-307.