Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 411-414

  Prost, W ^a   Auer, U ^a   Pacha, C ^a   Brennemann, A ^a   Goser, K F ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; LOGIC DEVICES; MONOLITHIC INTEGRATED CIRCUITS; THRESHOLD VOLTAGE; TUNNEL DIODES;

MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENTS (MOBILE); NEGATIVE DIFFERENTIAL RESISTANCE DEVICES; RESONANT TUNNELING DIODES;

GATES (TRANSISTOR);

EID: 0032691777     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)