Optimization of the metamorphic growth of GaAs for long wavelength VCSELs

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1015-1019

  Boucart, J ^a   Gaborit, F ^a   Fortin, C ^a   Goldstein, L ^a   Jacquet, J ^a   Leifer, K ^b  

^a OPTO+   (France)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COOLING; DISLOCATIONS (CRYSTALS); MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SUBSTRATES; SURFACE ROUGHNESS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

MOLECULAR BEAM EPITAXY;

EID: 0032690768     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00032-9     Document Type: Article

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