In situ lateral structuring during II-VI MBE growth with Al50Ga50As-GaAs shadow masks

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 599-603

  Schumacher, C ^a   Faschinger, W ^a   Hock, V ^a   Ress H R ^a   Nurnberger J ^a   Ehinger, M ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MASKS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

LATERAL CONFINEMENT; SELF-ORDERED GROWTH; SHADOW MASKS;

MOLECULAR BEAM EPITAXY;

EID: 0032690753     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01419-5     Document Type: Article

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