S-type negative differential conductivity and voltage switching due to the avalanche in semiconductor heterostructures

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 341-344

  Reklaitis, A ^a   Krotkus, A ^a   Geizutis, A ^a   Asche, M ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELDS; ELECTRON TUNNELING; ENERGY GAP; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; HOT-ELECTRON DIODES; NEGATIVE DIFFERENTIAL CONDUCTIVITY; VOLTAGE SWITCHING;

HETEROJUNCTIONS;

EID: 0032690674     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/010     Document Type: Article

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