Ultrashort FETs formed by GaAs/AlGaAs MBE regrowth on a patterned δ doped GaAs layer

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 761-764

  Burke, T M ^a   Leadbeater, M L ^b   Linfield, E H ^a   Patel, N K ^b   Ritchie, D A ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

TWO-DIMENSIONAL ELECTRON GAS (2DEG);

FIELD EFFECT TRANSISTORS;

EID: 0032690023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01464-X     Document Type: Article

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