Reduction of inhomogeneous broadening of exciton luminescence in CdxZn1-xSe ternary alloys and CdxZn1-xSe-ZnSe multiple quantum wells grown by molecular-beam epitaxy under Se-excess supply

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3550-3555

  Fujimoto, Masakatsu ^b   Shigematsu, Hiroshi ^a   Senda, Kazuhiko ^a   Yoshikawa, Mitsutoshi ^c   Kubo, Hachiya ^d   Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b Yamaguchi Prefectural Institute of Industrial Technology   (Japan)

^c Choshu Industry Co Ltd   (Japan)

^d Yamaguchi NF Electronics Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; EXCITONS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTOR DEVICE STRUCTURES; TERNARY SYSTEMS;

BEAM PRESSURE RATIO (BPR); BIEXCITON LUMINESCENCE; INHOMOGENEOUS BROADENING;

QUANTUM WELL LASERS;

EID: 0032689393     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3550     Document Type: Article

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