SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 28, Issue 1, 1999, Pages 163-165

Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering

(4) Hou, Y T a Feng, Z C b Li, M F a Chua, S J a,b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; MOLECULAR BEAM EPITAXY; ORDER DISORDER TRANSITIONS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTING GALLIUM ALUMINUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0032689338 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1096-9918(199908)28:1<163::AID-SIA598>3.0.CO;2-I Document Type: Article

Times cited : (3)

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