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Volumn , Issue , 1999, Pages 332-337
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Simulation of anisotropic wet-chemical etching using a physical model
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL GROWTH;
CRYSTAL ORIENTATION;
ETCHING;
POTASSIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SINGLE CRYSTALS;
WET CHEMICAL ETCHING;
MICROELECTRONIC PROCESSING;
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EID: 0032688942
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/memsys.1999.746850 Document Type: Conference Paper |
Times cited : (6)
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References (23)
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