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Volumn 2, Issue 1, 1999, Pages 1-11

Neural network modeling of PECVD silicon nitride films

Author keywords

[No Author keywords available]

Indexed keywords

NEURAL NETWORKS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON NITRIDE;

EID: 0032686626     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00023-7     Document Type: Article
Times cited : (13)

References (14)
  • 2
    • 0022046041 scopus 로고
    • Influence of deposition temperature, gas pressure, gas phase composition and mechanical stress of plasma silicon nitride layer
    • Claasen W.A.P., Valkenburg W.G.T.N., Willumsen M.F.C., Wijgert W.M.V.D. Influence of deposition temperature, gas pressure, gas phase composition and mechanical stress of plasma silicon nitride layer. Journal of Electrochemical Society. 132:1985. 893.
    • (1985) Journal of Electrochemical Society , vol.132 , pp. 893
    • Claasen, W.A.P.1    Valkenburg, W.G.T.N.2    Willumsen, M.F.C.3    Wijgert, W.M.V.D.4
  • 3
    • 0027592466 scopus 로고
    • Advantages of Plasma Etch Modeling Using Neural Networks Over Statistical Techniques
    • Himmel C.D., May G.S. Advantages of Plasma Etch Modeling Using Neural Networks Over Statistical Techniques. IEEE Trans. Semicond. Manuf. 6:1993;103.
    • (1993) IEEE Trans. Semicond. Manuf. , vol.6 , pp. 103
    • Himmel, C.D.1    May, G.S.2
  • 4
    • 0030217083 scopus 로고    scopus 로고
    • Modeling the growth of PECVD silicon nitride films for solar cell applications using neural networks
    • Han S., Cai L., May G.S., Rohatgi A. Modeling the growth of PECVD silicon nitride films for solar cell applications using neural networks. IEEE Trans. Semicond. Manuf. 9:1996;303.
    • (1996) IEEE Trans. Semicond. Manuf. , vol.9 , pp. 303
    • Han, S.1    Cai, L.2    May, G.S.3    Rohatgi, A.4
  • 7
    • 0027693885 scopus 로고
    • Use of neural networks in modeling semiconductor manufacturing processes: An example for plasma etch modeling
    • Rietman E.A., Lory E.R. Use of neural networks in modeling semiconductor manufacturing processes: an example for plasma etch modeling. IEEE Trans. Semicond. Manuf. 6:1993;343.
    • (1993) IEEE Trans. Semicond. Manuf. , vol.6 , pp. 343
    • Rietman, E.A.1    Lory, E.R.2
  • 8
    • 0022696286 scopus 로고
    • The modeling of plasma etching processes using response surface methodology
    • Pennwell, Tulsa, USA
    • Jenkins M., Mocella M., Allen K., Sawin H. The modeling of plasma etching processes using response surface methodology. Sol. St. Tech., Pennwell, Tulsa, USA, 1986.
    • (1986) Sol. St. Tech.
    • Jenkins, M.1    Mocella, M.2    Allen, K.3    Sawin, H.4
  • 11
    • 0028507249 scopus 로고
    • Manufacturing ICs the neural way
    • May G.S. Manufacturing ICs the neural way. IEEE Spectrum. 31:1994;47.
    • (1994) IEEE Spectrum , vol.31 , pp. 47
    • May, G.S.1
  • 14
    • 0028484164 scopus 로고
    • Plasma enhanced chemical vapour deposition of silicon nitride film for interface studies
    • Ghosh S., Bose D.N. Plasma enhanced chemical vapour deposition of silicon nitride film for interface studies. Journal of Material Science. 5:1994;193-198.
    • (1994) Journal of Material Science , vol.5 , pp. 193-198
    • Ghosh, S.1    Bose, D.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.