Optical properties of Si nanocrystals formed in SiO2 by ion implantation

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 249-254

  White, C W ^a   Withrow, S P ^a   Meldrum, A ^a   Budai, J D ^a   Hembree, D M ^a   Zhu, J G ^a   Henderson, D O ^a   Prawer, S ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; ION IMPLANTATION; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SILICA;

QUANTUM CONFINEMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032686532     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)