Observation of negative differential resistance in μc-Si:H/a-Si1-xCx:H double barrier devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1317-1319

  Yu, Zhenrui ^a,b   Pereyra, Ines ^a   Carreno M N P ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b NANKAI UNIVERSITY   (China)

Author keywords

Double barrier devices; Negative differential resistance; Oscillation; Plasma enhanced chemical vapor deposition; Quantum size effect; Resonant tunneling

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FILM PREPARATION; NEGATIVE RESISTANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM THEORY; X RAY DIFFRACTION ANALYSIS;

DOUBLE BARRIER DEVICES; QUANTUM SIZE EFFECTS; RESONANT TUNNELING; SINGLE BARRIER DEVICES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032686328     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1317     Document Type: Article

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