Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 187-190

  Sawdai, D ^a   Zhang, X ^a   Cui, D ^a   Pavlidis, D ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTORS (HBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032685380     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)