characterization of ramp-type josephson junctions with a co-doped prbacuo barrier

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 3366-3369

  Yoshida, Jiro ^a   Inoue, Shinji ^a   Hashimoto, Tatsunori ^a   Nagano, Toshihiko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DEPOSITION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; OXIDE SUPERCONDUCTORS; PRASEODYMIUM COMPOUNDS; SUPERCONDUCTING FILMS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSPORT PROPERTIES; YTTRIUM BARIUM COPPER OXIDES;

BARRIER LAYER THICKNESS; CONDUCTANCE; CURRENT TRANSPORT; DECAY LENGTH; HOPPING CONDUCTANCE; RAMP TYPE JOSEPHSON JUNCTIONS; RESONANT TUNNELING;

JOSEPHSON JUNCTION DEVICES;

EID: 0032685297     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783751     Document Type: Article

References (9)

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