Machine-aligned fabrication of submicron SIS tunnel junctions using a focused ion beam

IEEE Transactions on Applied Superconductivity

Volumn 9, Issue 2 PART 3, 1999, Pages 3240-3243

  Bass, Robert B ^a   Zhang, Jian Z ^a   Lichtenberger, Aurthur W ^a  

^a University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GALLIUM; INTEGRATED CIRCUITS; ION BOMBARDMENT; NIOBIUM COMPOUNDS; SUPERCONDUCTING MATERIALS;

FOCUSED ION BEAM; MACHINE ALIGNED TECHNIQUE; SUPERCONDUCTING INSULATING SUPERCONDUCTING TUNNEL JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 0032685293     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.783719     Document Type: Article

References (4)

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2. J. A. Stern, H. G. LeDuc, A..J. Judas, Third International Symposium on Space Terahertz Technology, 1995 pp. 420.
3. T. Akimoto, H. Nanbu, E. Ikawa, "Reactive ion etching lag on high oxide etching using high density plasma," J. Vac. Sci. Technology B, 13(6), pp.2390, Nov/Dec 1995.
4. H. G. LeDuc, B. Bumble. S. R. Cypher, A. J. Judas, J. A. Stern, Third International Symposium on Space Terahertz Technology, 1995 pp. 480.