SCOPUS 정보 검색 플랫폼

Langmuir

Volumn 15, Issue 20, 1999, Pages 6813-6820

Dynamic observation of reaction processes of Pd with Si on a Si(111) 7×7 surface after thermal treatment using UHV-STM

(6) Yoshida, Shozo a Itoh, Masanobu a Yamamoto, Naoichi a Nagamura, Toshihiko b Oyama, Munetaka a Okazaki, Satoshi a

a KYOTO UNIVERSITY (Japan)

b Japan Science and Technology Agency (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; PALLADIUM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMAL EFFECTS;

ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPY (UHV-STM);

SEMICONDUCTING FILMS;

EID: 0032684376 PISSN: 07437463 EISSN: None Source Type: Journal
DOI: 10.1021/la981572o Document Type: Article

Times cited : (5)

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