Cadmium zinc telluride substrate growth, characterization, and evaluation

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 726-731

  Kestigian, M ^a   Bollong, A B ^a   Derby, J J ^a   Glass, H L ^a   Harris, K ^a   Hettich, L ^a   Liao, P K ^a   Mitra, P ^a   Norton, P W ^a   Wadley, H ^a  

^a Hye Technology Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES;

BRIDGMAN TECHNIQUE; CADMIUM ZINC TELLURIDE; INFRARED FOCAL PLANE ARRAYS (INFRA);

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032683548     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0061-7     Document Type: Article

References (0)